Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity

The irradiation effect of X-ray on the electrical properties Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based surface conductivity hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. Ohmic contact formed by a Pd/Ti/Au multilayer Schottky metal Al thin film for fabrication SBDs MESFETs. performed with dose 100 kGy. It observed that both forward current drain MESFETs experienced reduction after irradiation. type substrate had an obvious radiation properties. For type-Ib SCD substrate, variation currents as inhomogeneous across devices. type-IIa is more uniform threshold voltage changed little upon partial oxidation in air exposure area device edge gate may be responsible degradation performance under passivation technique radiation-robustness needed devices diamond.